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Abstract The conventional manufacturing processes of aerogel insulation material is largely relying on the supercritical drying, which suffers from issues of massive energy consumption, high-cost equipment, and prolonged processing time. With the consideration of large market demand of the aerogel insulation material in the next decade, a low-cost and scalable fabrication technique is highly desired. In this paper, a direct ink writing (DIW) method is used to three-dimensionally fabricate the silica aerogel insulation material, followed by room-temperature and ambient pressure drying. Compared to the supercritical drying and freeze-drying, the reported method significantly reduces the fabrication time and costs. The cost-effective DIW technique offers the capability to print complex hollow internal structures, coupled with the porous structure, is found to be beneficial to the thermal insulation property. The addition of fiber to the ink assures the durability of the fabricated product, without sacrificing the thermal insulation performance. The foam ink preparation methods and the printability are demonstrated in this paper, along with the printing of complex three-dimensional geometries. The thermal insulation performance of the printed objects is characterized, and the mechanical properties are also examined. The proposed approach is found to have 56% reduction in the processing time. The printed silica aerogels exhibit a low thermal conductivity of 0.053 W m−1 K−1. 

The conventional manufacturing process of aerogel insulation material relies largely on the supercritical drying, which suffers from issues of massive energy consumption, high-cost equipment and prolonged processing time. With the consideration of large market demand of the aerogel insulation material in the next decade, a low-cost and scalable fabrication technique is highly desired. In this paper, a direct ink writing (DIW) method is used to three-dimensionally fabricate the silica aerogel insulation material, followed by room-temperature and ambient pressure drying. Compared to the supercritical drying and freeze-drying, the reported method significantly reduces the fabrication time and costs. The cost-effective DIW technique offers the capability to print complex hollow internal structures, coupled with the porous structure, is found to be beneficial to the thermal insulation property. The addition of fiber to the ink assures the durability of the fabricated product. The foam ink preparation methods and the printability are demonstrated in this paper, along with the printed samples for characterizing thermal insulation performance and mechanical properties.

 

Inkjet 3D printing has broad applications in areas such as health and energy due to its capability to precisely deposit micro-droplets of multi-functional materials. However, the droplet of the inkjet printing has different jetting behaviors including drop initiation, thinning, necking, pinching and flying, and they are vulnerable to disturbance from vibration, material inhomogeneity, etc. Such issues make it challenging to yield a consistent printing process and a defect-free final product with desired properties. Therefore, timely recognition of the droplet behavior is critical for inkjet printing quality assessment. In-situ video monitoring of the printing process paves a way for such recognition. In this paper, a novel feature identification framework is presented to recognize the spatiotemporal feature of in-situ monitoring videos for inkjet printing. Specifically, a spatiotemporal fusion network is used for droplet printing behavior classification. The categories are based on inkjet printability, which is related to both the static features (ligament, satellite, and meniscus) and dynamic features (ligament thinning, droplet pinch off, meniscus oscillation). For the recorded droplet jetting video data, two streams of networks, the frames sampled from video in spatial domain (associated with static features) and the optical flow in temporal domain (associated with dynamic features), are fused in different ways to recognize the droplet evolving behavior. Experiments results show that the proposed fusion network can recognize the droplet jetting behavior in the complex printing process and identify its printability with learned knowledge, which can ultimately enable the real-time inkjet printing quality control and further provide guidance to design optimal parameter settings for the inkjet printing process.

 

We report a reversible photo-induced doping effect in two-dimensional (2D) tungsten diselenide (WSe 2 ) field effect transistors on hexagonal boron nitride (h-BN) substrates under low-intensity visible light illumination (∼10 nW μm −2 ). Our experimental results have shown that this reversible doping process is mainly attributed to two types of defects in h-BN substrates. Moreover, the photo-doped WSe 2 transistors can be stable for more than one week in a dark environment and maintain the high on/off ratio (10 8 ) and carrier mobility, since there are no additional impurities involved during the photo-induced doping process to increase the columbic scattering in the conducting channel. These fundamental studies not only provide an accessible strategy to control the charge doping level and then to achieve a writing/erasing process in 2D transistors, but also shed light on the defect states and interfaces in 2D materials. 

We investigate electronic and optoelectronic properties of few-layer palladium diselenide (PdSe 2 ) phototransistors through spatially-resolved photocurrent measurements. A strong photocurrent resonance peak is observed at 1060 nm (1.17 eV), likely attributed to indirect optical transitions in few-layer PdSe 2 . More interestingly, when the thickness of PdSe 2 flakes increases, more and more photocurrent resonance peaks appear in the near-infrared region, suggesting strong interlayer interactions in few-layer PdSe 2 help open up more optical transitions between the conduction and valence bands of PdSe 2 . Moreover, gate-dependent measurements indicate that remarkable photocurrent responses at the junctions between PdSe 2 and metal electrodes primarily result from the photovoltaic effect when a PdSe 2 phototransistor is in the off-state and are partially attributed to the photothermoelectric effect when the device turns on. We also demonstrate PdSe 2 devices with a Seebeck coefficient as high as 74 μV K −1 at room temperature, which is comparable with recent theoretical predications. Additionally, we find that the rise and decay time constants of PdSe 2 phototransistors are ∼156 μs and ∼163 μs, respectively, which are more than three orders of magnitude faster than previous PdSe 2 work and two orders of magnitude over other noble metal dichalcogenide phototransistors, offering new avenues for engineering future optoelectronics.